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| STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESHTM IGBT TYPE STGP3NB60S STGD3NB60S s s s s VCES 600 V 600 V VCE(sat) < 1.5 V < 1.5 V IC 3A 3A 3 1 3 1 2 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL (SMD VERSION) DPAK TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOTOR CONTROL s LIGHT DIMMER s STATIC RELAYS ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter STGP3NB60S Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature 65 0.32 -65 to 150 150 600 20 20 6 3 24 45 Value STGD3NB60S V V V A A A W W/C C C Unit (q ) Pulse width limited by safe operating area August 2002 1/10 STGP3NB60S - STGD3NB60S THERMAL DATA TO-220 Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1.92 62.5 0.5 DPAK 2.75 100 C/W C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE = 15V, IC = 3 A VGE = 15V, IC = 1 A Min. 2.5 1.2 1 Typ. Max. 5 1.5 Unit V V DYNAMIC Symbol gfs Cies Coes Cres QG QGE QGC ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current VCE = 480 V, IC = 3 A, VGE = 15V Vclamp = 480 V , Tj = 150C RG = 1K 12 Test Conditions VCE = 25 V , IC = 3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. 1.7 Typ. 2.5 255 30 5.6 18 5.4 5.5 Max. Unit S pF pF pF nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 3 A RG = 1K , VGE = 15 V VCC= 480 V, IC = 3 A, RG=1K VGE = 15 V, Tj = 125C Min. Typ. 170 540 300 Max. Unit ns ns A/s J 2/10 STGP3NB60S - STGD3NB60S ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Test Conditions Vcc = 480 V, IC = 3 A, RGE = 1K , VGE = 15 V Min. Typ. 1.8 1.0 3.4 0.72 1.15 2.8 1.45 3.6 1.2 1.8 Max. Unit s s s s mJ s s s s mJ Vcc = 480 V, IC = 3 A, RGE = 1K , VGE = 15 V, Tj = 150C Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/10 STGP3NB60S - STGD3NB60S Safe Operating Area for TO-220 Safe Operating Area for DPAK Thermal Impedance for TO-220 Thermal Impedance for DPAK 4/10 STGP3NB60S - STGD3NB60S Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 5/10 STGP3NB60S - STGD3NB60S Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 6/10 STGP3NB60S - STGD3NB60S Switching Off Safe Operating Area Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/10 STGP3NB60S - STGD3NB60S TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 8/10 F2 F G H2 STGP3NB60S - STGD3NB60S TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 9/10 STGP3NB60S - STGD3NB60S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 10/10 |
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